MGFC5217 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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MGFC5217 Datasheet PDF : 3 Pages
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PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5217
K-Band 2-Stage Power Amplifier
DIE SIZE AND BOND PAD LOCATION(UNIT : µM)
1820
580
130
Vg1(-0.2 to -1.0 V)
Vg2 (-0.2 to -1.0 V)
GND
GND
RF-in
GND
X Dimension : 1940(+60/-100)µm
Y Dimension : 1000(+60/-100)µm
GND
RF-out
GND
Vd1
Vd2
GND
UNIT:µm
570
1570
1820
1940
MITSUBISHI
ELECTRIC
as of July '98
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