MMDF2N05ZR2 Просмотр технического описания (PDF) - ON Semiconductor
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MMDF2N05ZR2 Datasheet PDF : 10 Pages
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MMDF2N05ZR2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3)
V(BR)DSS
50
56
−
55
Vdc
−
−
mV/°C
Zero Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0 Vdc)
(VDS = 15 Vdc, VGS = 0 Vdc, TJ = 55°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (Note 3)
IDSS
IGSS
VGS(th)
μAdc
−
−
2.0
−
−
25
−
0.14
0.5
Vdc
2.0
3.0
4.0
−
−5.0
−
mV/°C
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 5.0 Vdc, ID = 0.6 Adc)
Forward Transconductance
(VDS = 15 Vdc, ID = 2.5 Adc)
(Cpk ≥ 2.0) (Note 3)
RDS(on)
gFS
mΩ
−
200
300
−
350
500
mMhos
−
2.0
−
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 0.6 Adc,
VGS = 10 Vdc,
RG = 25 Ω)
Gate Charge
(see figure 8)
(VDS = 25 Vdc, ID = 1.3 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
−
104
−
pF
−
58
−
−
16
−
−
24
48
ns
−
46
92
−
130
260
−
71
142
−
3.3
4.6
nC
−
0.7
−
−
1.3
−
−
1.4
−
Vdc
−
0.82
1.4
Reverse Recovery Time
trr
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
ta
tb
Reverse Recovery Storage Charge
QRR
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
−
66
−
ns
−
23
−
−
43
−
−
0.08
−
μC
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