MRF141G Просмотр технического описания (PDF) - Motorola => Freescale

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MRF141G

RF Power Field-Effect Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 100 mA)

V(BR)DSS

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

IDSS

Gate–Body Leakage Current

(VGS = 20 V, VDS = 0)

IGSS

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 100 mA)

VGS(th)

Drain–Source On–Voltage

(VGS = 10 V, ID = 10 A)

VDS(on)

Forward Transconductance

gfs

(VDS = 10 V, ID = 5.0 A)

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

Ciss

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

FUNCTIONAL TESTS (2)

Common Source Amplifier Power Gain

Gps

(VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz)

Drain Efficiency

η

(VDD = 28 V, Pout = 300 W, f = 175 MHz, ID (Max) = 21.4 A)

Load Mismatch

ψ

(VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz,

VSWR 5:1 at all Phase Angles)

NOTES:

1. Each side measured separately.

2. Measured in push–pull configuration.

Min

Typ

Max

Unit

65

—

—

Vdc

—

—

5.0

mAdc

—

—

1.0

µAdc

1.0

3.0

5.0

Vdc

0.1

0.9

1.5

Vdc

5.0

7.0

—

mhos

—

350

—

pF

—

420

—

pF

—

35

—

pF

12

14

—

dB

45

55

—

%

No Degradation in Output Power

MRF141G

2

MOTOROLA RF DEVICE DATA

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