MTW20N50E Просмотр технического описания (PDF) - ON Semiconductor
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MTW20N50E Datasheet PDF : 8 Pages
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MTW20N50E
TYPICAL ELECTRICAL CHARACTERISTICS
40
TJ = 25°C
VGS = 10 V
9V
8V
32
24
7V
16
6V
8
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
40
VDS ≥ 10 V
32
24
16
100°C
8
25°C
TJ = − 55°C
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
VGS = 10 V
0.5
0.4
0.3
TJ = 100°C
25°C
0.2
− 55°C
0.1
0
0 4 8 12 16 20 24 28 32 36 40
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.34
TJ = 25°C
0.32
0.30
0.28
VGS = 10 V
0.26
15 V
0.24
0 4 8 12 16 20 24 28 32 36 40
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.4
VGS = 10 V
2.0 ID = 10 A
1.6
10000
VGS = 0 V
1000
TJ = 125°C
100°C
1.2
100
0.8
10
0.4
25°C
0
− 50 − 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0 50 100 150 200 250 300 350 400 450 500
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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