MTSF3N03HD Просмотр технического описания (PDF) - ON Semiconductor
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MTSF3N03HD Datasheet PDF : 12 Pages
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MTSF3N03HD
TYPICAL ELECTRICAL CHARACTERISTICS
6
VGS = 10 V
TJ = 25°C
5
4.5 V
2.9 V
3.3 V
4
3.1 V
2.7 V
3
2
2.5 V
1
2.3 V
2.1 V
0
0
0.5
1
1.5
2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
6
VDS ≥ 10 V
5
4
3
100°C
2
25°C
1
TJ = -55°C
0
1
1.5
2
2.5
3
3.5
4
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.6
0.06
ID = 3.8 A
TJ = 25°C
0.5
TJ = 25°C
0.055
0.4
0.05
VGS = 4.5
0.3
0.045
0.2
0.04
10 V
0.1
0.035
0
0.03
0
2
4
6
8
10
0
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance versus
Gate–to–Source Voltage
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 1.9 A
1.5
1.0
0.5
1000
VGS = 0 V
100
10
1
TJ = 125°C
100°C
25°C
0
-ā50 -ā25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 7. On–Resistance Variation
with Temperature
0.1
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
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4
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