MTH8N90 Просмотр технического описания (PDF) - New Jersey Semiconductor
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MTH8N90 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (Tc = 26'C unleaa otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
<Ves = 0.lD = 250*.A)
Zero Gate Voltage Drain Current
WDS = Rated VDSS.VQS =- 0)
(Vos - 0.8 Rated VDSS. VGS - 0,Tj - 125-C)
Gate-Body Leakage Current, Forward (VQSF - 20 Vdc, VQS = 0)
Gate-Body Leakage Current, Reverse (VQSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS*
Gate Threshold Voltage (VDS ~ VGS- <D " 1 rnA)
TJ - irwc
Static Drain-Source On Resistance (VQ$ = 10 vdc- 'D " 4 Adcl
Drain-Source On-Voltage (VGS " 10 V)
«D = 8 Adc)
(lD = 4Adc,Tj - 100-C)
Forward Transconductance (VDS = 15 V, ID = 4 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V0s -25V, VGS = 0.
f = 1 MHz)
See Figure 10
SWITCHING CHARACTERISTICS' (Tj - 100'C)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD - 26 v, ID » 4 Amps
"gen " 50 ohms)
See Figures 12 and 13
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS c °'8 Rated VDSS-
ID - 8 Amps, VGS = 10 v>
See Figures 11 and 14
SOURCE DRAIN DIODE CHARACTERISTICS*
Forward On-Voltage
(IS - 8 Amps, VGS = 0)
Forward Turn-On Time
Reverse Recovery Time
US = 8A, dls/dt - 100A/)»,
VR - 70 V, See Figures IE and 16)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.26* from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.26' from package to source bond pad,)
•PUIsi Tut: Pulsa Width * 300 n, Duty Cycle £ 2%.
Symbol
V(BR)DSS
'DSS
IQSSF
IGSSR
VGStth)
'DS(on)
VDS(on)
9FS
C|53
COS3
CM.
td(on)
tr
«d(offl
tf
oa
OB.
Qgd
VSD
ton
«rr
Ld
LS
Mln
Max
Unit
900
—
Vdc
*iAdc
-
250
1000
_.
100
nAdc
—
100
nAdc
2
4.6
Vdc
1.5
4
-
1.8
Ohms
Vde
-
17
IS
3
—
mhos
JOOOlTyp)
-
PF
_
176(Typl
100 (Typ)
-
66 (Typ)
-
ns
175 (Typ)
—
440 (Typ)
—
180 (Typ)
—
110 (Typ) 140
nC
18 (Typ]
-
50 (Typ)
—
1.1 (Typ) | 1.6 | Vdo
Limited by stray inductance
1200 (Typ) | — | ns
nH
4 (Typ)
-
6 (Typ)
10 (Typ)
—
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