MTH8N90 Просмотр технического описания (PDF) - New Jersey Semiconductor
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MTH8N90 Datasheet PDF : 2 Pages
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c(/l£i±£uu ^zmi-donductoi Lpioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TWOS
These TMOS Power FETs are designed for high voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100'C
• Designer's Data — IDSS- Vos(on)/ VQS(th) and SOASpecified
at Elevated Temperature
• SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
MTH8N90
TMOS POWER FETs
8 AMPERES
rDS(on) = 1-8 OHMS
900 VOLTS
MAXIMUM RATINGS (TC - 25'C unless otherwise noted)
Ruing
Drain-Source Voltage
Drain-Gate Voltage
(RGS = 1 Mm
Gate-Source Voltage — Continuous
— Non-Repetitive (tp s 50 pa)
Drain Currant — Continuous
— Pulsed
Total Power Dissipation
Derate above 2S°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8* from case for 6 seconds
Symbol
Value
Unit
VDSS
900
Vdc
VDGR
900
Vdq
VGS r ±2o
VQSM ±40
ID
8
IDM
22
PD
180
1.44
Tj, Tatg -65 to 160
Vde
Adc
Watts
VWC
•c
R<UC
0.7
•c/w
RWA
30
TL
27S
•c
TO-218AC
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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