MW7IC2750NR1 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

MW7IC2750NR1

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

TYPICAL CHARACTERISTICS

30

10

S21

20

0

10

--10

0

--20

S11

--10

--30

VDD = 28 Vdc

IDQ1 = 160 mA, IDQ2 = 550 mA

--20

--40

1800 2000 2200 2400 2600 2800 3000 3200 3400

f, FREQUENCY (MHz)

Figure 12. Broadband Frequency Response

WIMAX TEST SIGNAL

100

10

Input Signal

1

0.1

0.01

OFDM 802.16d, 64 QAM 3/4, 4 Bursts

0.001 10 MHz Channel Bandwidth, Input Signal

PAR = 9.5 dB @ 0.01% Probability

on CCDF

0.0001

0

2

4

6

8

10

PEAK--TO--AVERAGE (dB)

Figure 13. OFDM 802.16d Test Signal

--10

--20

10 MHz

Channel BW

--30

--40

--50

--60

--70

--80

--90

--20

ACPR in 1 MHz

Integrated BW

--15 --10 --5

ACPR in 1 MHz

Integrated BW

0

5

10 15 20

f, FREQUENCY (MHz)

Figure 14. WiMAX Spectrum Mask Specifications

RF Device Data

Freescale Semiconductor, Inc.

MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1

9

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