DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MW7IC2750NR1 Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге
Компоненты Описание
производитель
MW7IC2750NR1
NXP
NXP Semiconductors. NXP
MW7IC2750NR1 Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW Application
(Case Temperature 80°C, Pout = 50 W CW)
Stage 1, 28 Vdc, IDQ1 = 160 mA
Stage 2, 28 Vdc, IDQ2 = 550 mA
Symbol
VDS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
30
Value (2,3)
3.0
0.7
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
Final Application
Stage 1, 28 Vdc, IDQ1 = 160 mA
2.9
(Case Temperature 70°C, Pout = 8 W CW)
Stage 2, 28 Vdc, IDQ2 = 550 mA
0.7
Driver Application
Stage 1, 28 Vdc, IDQ1 = 160 mA
2.8
(Case Temperature 65°C, Pout = 4 W CW)
Stage 2, 28 Vdc, IDQ2 = 550 mA
0.7
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10
μAdc
IDSS
1
μAdc
IGSS
1
μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 46 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 160 mA, Measured in Functional Test)
VGS(Q)
3
3.8
4.5
Vdc
Stage 1 — Dynamic Characteristics (4)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
550
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
(continued)
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
RF Device Data
2
Freescale Semiconductor, Inc.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]