1N60F Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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1N60F Datasheet PDF : 8 Pages
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SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
1N60 Series RRooHHSS
Nell High Power Products
Fig.1 Drain current vs. Source to drain voltage
1400
1200
1000
800
600
400
200
0
0
200
400
600
800
1000
Source to drain voltage, VSD (mV)
Fig.2 Drain-source on-state resistance
characteristics
7
9
5
VGS = 10V
lD = 0.6V
4
3
2
1
0
0
100 200 300 400 500 600
Drain to Source voltage, VDS (mV)
Fig.3 Drain current vs. Gate threshold voltage
300
250
200
150
100
50
0
0
1
2
3
4
Gate threshold voltage, VGS(TH) (V)
Fig.4 Drain current vs. Drain-Source
breakdown voltage
450
400
350
300
250
200
150
100
50
0
0
200
400
600
800
Drain-Source breakdown voltage, BVDSS (V)
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