1N60F Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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1N60F Datasheet PDF : 8 Pages
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SEMICONDUCTOR
1N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(1.2A, 600Volts)
DESCRIPTION
The Nell 1N60 is a three-terminal silicon
device with current conduction capability
of 1.2A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
D
G
D
S
TO-251 (I-PAK)
(1N60F)
D
G
S
TO-252 (D-PAK)
(1N60G)
FEATURES
RDS(ON) = 11.5Ω@VGS = 10V
Ultra low gate charge(6nC max.)
Low reverse transfer capacitance
(CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
DS
TO-220AB
(1N60A)
GDS
TO-220F
(1N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
1.2
600
1.15 @ VGS = 10V
6
G
D
S
TO-92
(1N60E)
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
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