MTP75N03HDL Просмотр технического описания (PDF) - ON Semiconductor
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MTP75N03HDL Datasheet PDF : 8 Pages
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MTP75N03HDL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3.) V(BR)DSS
25
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 25 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 V)
IGSS
−
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
(Cpk ≥ 3.0) (Note 3.)
VGS(th)
1.0
Static Drain−Source On−Resistance
(VGS = 5.0 Vdc, ID = 37.5 Adc)
(Cpk ≥ 2.0) (Note 3.) RDS(on)
−
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125°C)
VDS(on)
−
−
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
gFS
15
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDS = 15 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc,
Rg = 4.7 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Gate Charge
QT
−
(VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 75 Adc, VGS = 0 Vdc)
(IS = 75 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
Reverse Recovery Time
trr
−
(IS = 75 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Typ
Max
Unit
Vdc
−
−
mV/°C
µAdc
−
100
−
500
−
100
nAdc
Vdc
1.5
2.0
mV/°C
mΩ
6.0
9.0
Vdc
0.68
−
0.6
55
−
mhos
4025
5635
pF
1353
1894
307
430
24
48
ns
493
986
60
120
149
300
61
122
nC
14
28
33
66
27
54
Vdc
0.97
1.1
0.87
−
58
−
ns
27
−
30
−
0.088
−
µC
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