MPS3569 Просмотр технического описания (PDF) - New Jersey Semiconductor
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MPS3569 Datasheet PDF : 1 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
t Dnc.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Bate Voltage
Collector Current — Continuous
Total Device Dissipation @ TA - 25°C
Derate above 25°C
Total Device Dissipation <8> TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
MPS3S67MPS356S
Symbol MPS3569
VCEO
VCBO
VEBO
ic
PD
40
60
80
5.0
600
626
5
PD
1.5
12
Tj, Tstg
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mWC
Wans
mwrc
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R«JC
RAJA
Max
«.3
200
Unit
°c/w
"C/W
MPS3567
MPS3568
MPS3569
TO-92 (TO-226AA)
3 Collector
/
*£)
"3
1 Emitter
AMPLIFIER TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage! 1 1
dC = 30 mAdc, IB - 01
MPS3567, MPS3569
MPS3568
Collector-Base Breakdown Voltage
dc - 100 MAdc, 1^ = 0)
Emitter-Base Breakdown Voltage
(IE " 10 jiAdc. Ic <* 01
Collector Cutoff Current
(vCB - 40 Vdc, iE = 01
(VCB - 40 Vdc, IE = O, TA = 75"C)
Emitter Cutoff Current
<VEB - 4.0 Vdc, ic = 01
ON CHARACTERISTICS!!)
DC Current Gain
dC - 30 mAdc, VCE = 1-0 Vdc)
MPS3567, MPS3568
MPS3569
(IC - 150 mAdc, VC£ = 1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC - 150 mAdc, IB - 16 mAdc)
Bate-Emitter Saturation Voltage
dC - 160 mAdc, IB = IB mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain — Bandwidth Product! 1)
dC - 50 mAdc. VCE = 10 Vdc, f - 20 MHz)
Output Capacitance
(VCB - 10V, f - 1.0MHz)
Input Capacitance
(VEB - o.s vdc, ic - o, f - i.o MHZ)
MPS3567, MPS3568
MPS3569
Symbol
Mln
VCEC-ISUS)
40
60
V(BR)CBO
80
VIBRIEBO
5.0
ICBO
-
'EBO
—
hFE
40
100
40
100
VCEIsatl
—
vBE(9at)
—
60
'T
Cobo
—
Cibo
—
Max
Unit
Vdc
-
—
Vdc
—
Vdc
50
nAdc
5.0
fiAdc
25
nAdc
^~
-
120
300
0.25
Vdc
1.1
Vdc
-
MHz
20
pF
80
pF
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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