VN30N Просмотр технического описания (PDF) - STMicroelectronics

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производитель

VN30N

HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics 

VN30N

ELECTRICAL CHARACTERISTICS (continued)

PROTECTION AND DIAGNOSTICS (continued)

Symb ol

Parameter

Test Conditions

Min. Typ. Max. Unit

VS CL (•) Status Clamp Voltage ISTAT = 10 mA

ISTAT = -10 mA

6

V

-0. 7

V

tSC Switch-off Time in

RLOAD < 10 mΩ Tc = 25 oC

Short Circuit Condition

1

ms

at Start-Up

IOV Over Current

RLOA D < 10 mΩ -40 ≤ Tc ≤ 125 oC

140

A

IAV Average Current in

Short Circuit

RLOAD < 10 mΩ Tc = 85 oC

2.5

A

IOL Open Load Current

Level

5

1250 mA

TTS D

Thermal Shut-down

Temperature

140

oC

TR

Reset Temperature

125

oC

(*) The VIH is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor

cal culated to not exceed 10 mA at the i nput pin.

(•) Status determination > 100 µs after the switching edge.

FUNCTIONAL DESCRIPTION

The device has a diagnostic output which

indicates open circuit (no load) and over

temperature conditions. The output signals are

processed by internal logic.

To protect the device against short circuit and

over-current condition, the thermal protection

turns the integrated Power MOS off at a minimum

junction temperature of 140 oC. When the

temperature returns to about 125 oC the switch is

automatically turned on again.

In short circuit conditions the protection reacts

with virtually no delay, the sensor being located in

the region of the die where the heat is generated.

PROTECTING THE DEVICE AGAINST REVER-

SE BATTERY

The simplest way to protect the device against a

continuous reverse battery voltage (-26V) is to

insert a Schottky diode between pin 1 (GND) and

ground, as shown in the typical application circuit

(fig. 3).

The consequences of the voltage drop across

this diode are as follows:

– If the input is pulled to power GND, a negative

voltage of -VF is seen by the device. (VIL, VIH

thresholds and VSTAT are increased by VF with

respect to power GND).

– The undervoltage shutdown level is increased

by VF.

If there is no need for the control unit to handle

external analog signals referred to the power

GND, the best approach is to connect the

reference potential of the control unit to node [1]

(see application circuit in fig. 4), which becomes

the common signal GND for the whole control

board.

In this way no shift of VIH, VIL and VSTAT takes

place and no negative voltage appears on the

INPUT pin; this solution allows the use of a

standard diode, with a breakdown voltage able to

handle any ISO normalized negative pulses that

occours in the automotive environment.

4/10

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