2N60 Просмотр технического описания (PDF) - Estek Electronics Co. Ltd
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2N60 Datasheet PDF : 5 Pages
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Derate above 25℃
Junction Temperature
Storage Temperature
＊
Drain current limited by maximum junction temperature.
TJ
TSTG
0.44
0.19
0.35
+150
-55~+150
2N60
W/℃
℃
℃
■ Thermal Characteristics
Parameter
Symbol
Thermal Resistance Junction-Ambient
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case
RthJA
RthCS
RthJC
Ratings
TO-220 TO-220F
62.5
TO-251 TO-252
50＊（110）
0.5
--
--
2.32
5.5
2.87
Units
℃/W
■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.）
Parameter
Symbol
Test Conditions
Min
Typ
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V,ID=250µA
VDS=600V,VGS=0V
VDS=480V,TC=125℃
600
--
--
--
--
--
Gate-Body Leakage
Current
Forward
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
IGSS
△BVDSS/△TJ
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
ID=250µA
--
--
--
--
--
0.7
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
2.0
--
VDS=10V,
ID=1.0A(TO220,TO220F)
--
4.1
ID=0.95A(TO251,TO252)
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VSD
ISD
ISM
tRR
Q RR
VDS=25V,VGS=0V,
f=1MHZ
--
200
--
20
--
4
--
10
VDD=300V,ID=2.0A,
--
25
RG=25Ω
(Note 4, 5)
--
25
--
30
VDS=480V, ID=2.0A
--
9
VGS=10V
--
1.5
(Note 4, 5)
--
4.0
VGS=0V,
ISD=2.0A(TO220,TO220F)
--
--
ISD=0.95A(TO251,TO252)
TO-220,TO-220F
--
--
TO-251, TO-252
--
--
TO-220,TO-220F
--
--
TO-251, TO-252
--
--
ISD=2.0A,
--
230
dISD/dt=100A/µs
(Note 4)
--
1.0
1. Repetitive Rating : Pulse width limited by maxim um junction temperature
2. L = 60 mH, IAS = 2.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C
Max Units
--
V
1
µA
10
µA
100
nA
-100 nA
--
V/℃
4.0
V
5.0
Ω
--
pF
--
pF
--
pF
--
ns
--
ns
--
ns
--
ns
--
nC
--
nC
--
nC
1.4
V
2.0
A
1.9
8.0
A
7.6
--
ns
--
µC
2
BEIJING ESTEK ELECTRONICS CO.,LTD
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