2N60 Просмотр технического описания (PDF) - Estek Electronics Co. Ltd

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2N60

N2 Amps， 600Volts N-Channel MOSFET

Estek Electronics Co. Ltd 

N2 Amps，600Volts

N-Channel MOSFET

■ Description

The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is

designed for high voltage, high speed power switching

applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers.

■ Features

RDS(ON) = 5.00Ω@VGS = 10 V

Low gate charge ( typical 9nC)

High ruggedness

Fast switching capability

Avalanche energy specified

Improved dv/dt capability

■ Symbol

2N60

■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)

Parameter

Symbol

TO-220

Ratings

TO-220F TO-251

TO-252

Drain-Source Voltage

Gate-Source Voltage

Drain Currenet

Continuous

Tc=25℃

Tc=100℃

VDSS

VGSS

ID

2.0

1.35

600

±30

2.0＊

1.35＊

1.9

1.14

Drain Current Pulsed

(Note 1)

IDP

8

8＊

7.6

Avalanche Energy

Repetitive (Note 1) EAR

5.55

4.4

Single Pulse (Note EAS

130

120

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

Total Power Dissipation

Tc=25℃

PD

55.5

23.6

44

Units

V

V

A

A

A

mJ

mJ

V/ns

W

1

BEIJING ESTEK ELECTRONICS CO.,LTD

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