2N60 Просмотр технического описания (PDF) - TY Semiconductor

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производитель

2N60

N-Channel MOSFET

TY Semiconductor 

DSSMMIPDDTTTTyypyypppeeee

MMOOSSFFIEECTT

Product specification

2N60

Electrical Characteristics Ta = 25

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode Forward

Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Symbol

Test conditons

Min Typ Max Unit

VDSS VGS = 0 V, ID = 250 ìA

600

V

VDS = 600 V, VGS = 0 V

IDSS

VDS = 480 V, TC = 125

10

A

100

A

IGSSF VGS = 30 V, VDS = 0 V

100 nA

IGSSR VGS = -30 V, VDS = 0 V

-100 nA

VGS(th) VDS = VGS, ID = 250 ìA

2.0

4.0 V

RDS(on) VGS = 10 V, ID = 1 A

3.8 5.0

gFS VDS = 50V, ID = 1 A * 1

2.25

S

Ciss

270 350 pF

Coss VDS = 25 V, VGS = 0 V, f = 1.0 MHz

40 50 pF

Crss

5

7 pF

td(on)

10 30 ns

tr VDD = 300 V, ID = 2.4 A, RG = 25

td(off) --------

*1,2

25 60 ns

20 50 ns

tf

25 60 ns

Qg

Qgs

VDS = 480 V, ID = 2.4A, VGS = 10 V------

--

*1,2

Qgd

9 11 nC

1.6

nC

4.3

nC

IS

2

A

ISM

VSD VGS = 0 V, IS = 2.0 A

trr VGS = 0 V, IS = 2.4 A,

Qrr dIF / dt = 100 A/ s * 1

8

A

1.4 V

180

ns

0.72

C

* 1. Pulse Test : Pulse width 300µs, Duty cycle 2%

* 2. Essentially independent of operating temperature.

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sales@twtysemi.com

4008-318-123

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