2N60F Просмотр технического описания (PDF) - SUNMATE electronic Co., LTD
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2N60F Datasheet PDF : 8 Pages
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Features
● RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A
● Fast switching capability
● Lead free in compliance with EU RoHS directive.
● Improved dv/dt capability, high ruggedness
Mechanical Data
● Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package
2N60 Series
N-CHANNEL POWER MOSFET
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Part No.
2N60P
2N60D
2N60T
2N60F
2N60K
2N60G
Package
TO-251
TO-252
TO-220
ITO-220
TO-262
TO-263
Packing
75pcs / Tube
75pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
Block Diagram
D
G
S
Maximum Ratings TA = 25°C unless otherwise specified
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
SYMBOL
VDSS
VGSS
IAR
ID
IDM
EAS
RATINGS
600
±30
2.0
2.0
8.0
115
UNIT
V
V
A
A
A
mJ
TO-220/TO-262/TO-263
44
W
Power Dissipation
ITO-220
PD
23
W
TO-251/TO-252
34
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
TOPR
-55 ~ +150
°C
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 2.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
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