BY251 Просмотр технического описания (PDF) - Diode Semiconductor Korea
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BY251 Datasheet PDF : 3 Pages
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Diode Semiconductor Korea
BY251(Z)- - -BY255(Z)
FIG.1 -- TYPICAL FORWARD CHARACTERISTICS
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8
TJ=25
Pulse Width=300uS
1.0 1.2 1.4 1.6
FORWARD VOLTAGE, VOLTS
FIG.2 -- TYPICAL CURRENT DERATING CURVE
4
3
2
Single Phase
Half Wave 60HZ
Resistive or
1
Inductive Load
0
0
25
50 75 100
125 150
AMBIENT TEMPERATURE,
FIG.3 -- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
TJ=125℃
8.3ms Single Half
Sine-Wave
0
1
2
4
8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
60
f=1MHz
40
TJ=25
20
10
4
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, VOLTS
www.diode.kr
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