BFW16A Просмотр технического описания (PDF) - Comset Semiconductors

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BFW16A

HF WIDEBAND TRANSISTORS

Comset Semiconductors 

NPN BFW16A

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

ICB0

Collector Cutoff Current

hFE

DC Current Gain

fT

Transition frequency

CC

Collector capacitance at

f=1MHz

Cre

Feedback capacitance at

f=1MHz

F

Noise figure at f= 200 MHz

GP

Power gain (not neutralized)

Test Condition(s)

Min Typ Max Unit

IE=0, VCB=20 V, TJ=150°C

IC=50 m A, VCE=5.0 V

IC=150 mA, VCE=5.0 V

VCE=15 V, IC=150 mA

f=500 MHz

-

- 20 µA

25 -

25 -

-

-

-

- 1.2 - GHz

IE= Ie = 0, VCB=15 V

IC= 10 mA, VCE=15 V

Tamb= 25°C

IC= 30 mA, VCE=15 V

ZS= 75 Ω, Tamb= 25°C

-

-

4

pF

- 1.7 -

-

-

6 dB

IC= 70 mA

VCE=18 V

Tamb= 25°C

200 MHz - 16 -

dB

800 MHz - 6.5 -

09/11/2012

COMSET SEMICONDUCTORS

2|3

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