IRF740 Просмотр технического описания (PDF) - New Jersey Semiconductor
Номер в каталоге
Компоненты Описание
производитель
IRF740 Datasheet PDF : 2 Pages
| |||
N-Channel Mosfet Transistor
ELECTRICAL CHARACTERISTICS (TC=25°C)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGSITH) Gate Threshold Voltage
VDS= VGS; lo= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGs=10V;lD=5A
loss
Gate Source Leakage Current
VGS= ±20V;VDS=0
loss
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VsD
Diode Forward Voltage
lF=10A;VGS=0
IRF740
WIN MAX UNIT
400
V
2
4
V
0.55
n
±500 nA
250
uA
2.2
V
Share Link: 