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2N3904 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2N3904
GE
General Semiconductor GE
2N3904 Datasheet PDF : 3 Pages
1 2 3
2N3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Small Signal Current Gain
at VCE = 10 V, IC = 1 mA, f = 1 kHz
SYMBOL
MIN.
hfe
100
MAX.
400
UNIT
Ð
Output Admittance
at VCE = 1 V, IC = 1 mA, f = 1 kHz
hoe
1
40
mS
Noise Figure
at VCE = 5 V, IC = 100 mA, RG = 1 kW,
f = 10 É 15000 Hz
NF
Ð
5
dB
Delay Time (see Fig. 1)
at IB1 = 1 mA, IC = 10 mA
td
Ð
35
ns
Rise Time (see Fig. 1)
at IB1 = 1 mA, IC = 10 mA
tr
Ð
35
ns
Storage Time (see Fig. 2)
at ÐIB1 = IB2 = 1 mA, IC = 10 mA
ts
Ð
200
ns
Fall Time (see Fig. 2)
at ÐIB1 = IB2 = 1 mA, IC = 10 mA
tf
Ð
50
ns
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors

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