2N3904 Просмотр технического описания (PDF) - General Semiconductor
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2N3904 Datasheet PDF : 3 Pages
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2N3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at IC = 10 mA, IE = 0
Collector-Emitter Breakdown Voltage
at IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at IE = 10 mA, IC = 0
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Base Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Collector-Emitter Cutoff Current
VEB = 3 V, VCE = 30 V
Emitter-Base Cutoff Current
VEB = 3 V, VCE = 30 V
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
Voltage Feedback Ratio
at VCE = 10 V, IC = 1 mA, f = 1 kHz
Gain-Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance
at VCB = 5 V, f = 100 kHz
Emitter-Base Capacitance
at VEB = 0.5 V, f = 100 kHz
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VCEsat
VBEsat
VBEsat
ICEV
IEBV
hFE
hFE
hFE
hFE
hFE
hie
hre
fT
CCBO
CEBO
MIN.
60
40
6
Ð
Ð
Ð
Ð
Ð
Ð
40
70
100
60
30
1
0.5 á 10Ð4
300
Ð
Ð
MAX.
Ð
Ð
Ð
0.2
0.3
0.85
0.95
50
50
Ð
Ð
300
Ð
Ð
10
8 á 10Ð4
Ð
4
8
UNIT
V
V
V
V
V
V
V
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
Ð
MHz
pF
pF
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