BFR106 Просмотр технического описания (PDF) - Inchange Semiconductor
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BFR106 Datasheet PDF : 5 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR106
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
15
V
100 μA
0.1 μA
10 μA
hFE
DC Current Gain
IC= 70mA ; VCE= 8V
40
220
fT
Current-Gain—Bandwidth Product
IC= 70mA ; VCE= 8V; f= 500MHz 3.5
5
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.95 1.5 pF
PG
Power Gain
IC= 70mA ; VCE= 8V; f= 900MHz
12.5
dB
PG
Power Gain
︱S21e︱2 Insertion Power Gain
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IC= 70mA ; VCE= 8V; f= 1.8GHz
7.5
dB
IC= 70mA ; VCE= 8V; f= 900MHz
10.5
dB
IC= 70mA ; VCE= 8V; f= 1.8GHz
5
dB
IC= 20mA ; VCE= 8V; f= 900MHz
2.5
dB
NF
Noise Figure
IC= 20mA ; VCE= 8V; f= 1.8GHz
4
dB
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