BFR106 Просмотр технического описания (PDF) - NXP Semiconductors.
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BFR106 Datasheet PDF : 10 Pages
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NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
600
1/2 page (Datasheet)
P tot
(mW)
400
MEA398 - 1
22 mm
120
handbook, halfpage
h FE
80
MBB774
200
40
0
0
50
100
150
Ts
(
o
200
C)
Fig.2 Power derating curve.
0
0
40
80
120
I C (mA)
VCE = 9 V; Tamb = 25 C.
Fig.3 DC current gain as a function of collector
current.
8
handbook, halfpage
fT
(GHz)
6
MBB773
4
2
0
0
40
80 I C (mA) 120
VCE = 9 V; f = 500 MHz; Tj = 25 C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
handbook,4h0alfpage
G UM
(dB)
30
MEA399
20
10
0
10
102
103 f (MHz) 104
IC = 30 mA; VCE = 6 V; Tamb = 25 C.
Fig.5 Maximum unilateral power gain as a
function of frequency.
4
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