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BFR106

NPN 5 GHz wideband transistor

NXP Semiconductors. 

NXP Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFR106

THERMAL RESISTANCE

SYMBOL

Rth j-s

PARAMETER

thermal resistance from junction to

soldering point

CONDITIONS

up to Ts = 70 C; note 1

Note

1. Ts is the temperature at the soldering point of the collector tab.

THERMAL RESISTANCE

210 K/W

CHARACTERISTICS

Tj = 25 C unless otherwise specified.

SYMBOL

ICBO

hFE

fT

Cc

Ce

Cre

GUM

F

d2

Vo

PARAMETER

collector cut-off current

DC current gain

transition frequency

collector capacitance

emitter capacitance

feedback capacitance

maximum unilateral power gain

(note 1)

noise figure

second order intermodulation

distortion

output voltage

CONDITIONS

IE = 0; VCB = 10 V

IC = 50 mA; VCE = 9 V

IC = 50 mA; VCE = 9 V; f = 500 MHz;

Tamb = 25 C

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IC = 0; VCE = 10 V; f = 1 MHz

IC = 30 mA; VCE = 6 V; f = 800 MHz;

Tamb = 25 C

IC = 30 mA; VCE = 6 V; f = 800 MHz;

Tamb = 25 C

note 2

note 3

MIN. TYP. MAX. UNIT





100 nA

25 80 



5



GHz



1.5 

pF



4.5 

pF



1.2 

pF



11.5 

dB



3.5 

dB



50 

dB



350 

mV

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM

=

10

log

------------------------S----2---1----2-----------------------

1 – S11 21 – S22 2

dB.

2. IC = 30 mA; VCE = 6 V; RL = 75 ; Tamb = 25 C;

f(pq) = 810 MHz; Vo = 100 mV.

3. dim = 60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; f(pqr) = 793.25 MHz.

September 1995

3

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