BFR106 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BFR106 Datasheet PDF : 10 Pages
| |||
NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN
DESCRIPTION
Code: R7p
1 base
2 emitter
3 collector
lfpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
Vo
output voltage
CONDITIONS
open emitter
open base
up to Ts = 70 C; note 1
IC = 50 mA; VCE = 9 V; Tamb = 25 C
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 C
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 C
IC = 50 mA; VCE = 9 V; RL = 75 ;
Tamb = 25 C; dim = 60 dB;
f(pqr) = 793.25 MHz
MIN.
25
TYP.
80
5
11.5
350
MAX.
20
15
100
500
UNIT
V
V
mA
mW
GHz
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to Ts = 70 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
65
MAX.
20
15
3
100
500
150
175
UNIT
V
V
V
mA
mW
C
C
September 1995
2
Share Link: 