BFR106 Просмотр технического описания (PDF) - Philips Electronics
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BFR106 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 70 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
210 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
hFE
fT
Cc
Ce
Cre
GUM
F
d2
Vo
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
second order intermodulation
distortion
output voltage
CONDITIONS
IE = 0; VCB = 10 V
IC = 50 mA; VCE = 9 V
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 °C
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 °C
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 °C
note 2
note 3
MIN. TYP. MAX. UNIT
−
−
100 nA
25 80 −
−
5
−
GHz
−
1.5 −
pF
−
4.5 −
pF
−
1.2 −
pF
−
11.5 −
dB
−
3.5 −
dB
−
−50 −
dB
−
350 −
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
2. IC = 30 mA; VCE = 6 V; RL = 75 Ω; Tamb = 25 °C;
f(p+q) = 810 MHz; Vo = 100 mV.
3. dim = −60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 793.25 MHz.
September 1995
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