BFR106(2001) Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BFR106
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR106

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 70 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 20 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

fT

3.5

5

- GHz

Ccb

- 0.95 1.5 pF

Cce

- 0.25 -

Ceb

-

4.4

-

F

dB

-

2.5

-

-

4

-

Power gain, maximum available 1)

IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gma

f = 1.8 GHz

- 12.5 -

-

7.5

-

Transducer gain

IC = 70 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

- 10.5 -

-

5

-

1Gma = |S21 / S12| (k-(k2-1)1/2)

3

Jun-27-2001

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