BFR106(2001) Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BFR106
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

NPN Silicon RF Transistor

For low noise, high-gain amplifiers

For linear broadband amplifiers

Special application: antenna amplifiers

Complementary type: BFR194 (PNP)

BFR106

3

2

1 VPS05161

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

BFR106

R7s

1=B

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation, TS
73 °C 1)

Junction temperature

Ambient temperature

Storage temperature

Pin Configuration

2=E

3=C

Package

SOT23

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

Value

Unit

15

V

20

20

3

100

mA

12

700

mW

150

°C

-65 ... 150

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

110

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

1

Jun-27-2001

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