BFP81 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BFP81

NPN Silicon RF Transistor

Infineon Technologies 

NPN Silicon RF Transistor

• For low-noise amplifiers up to 2GHz

at collector currents from 0.5 mA to 20 mA.

BFP 81

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

BFP 81 FAs

Q62702-F1611

1=C 2=E 3=B 4=E

Package

SOT-143

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS ≤ 73 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

1) TS is measured on the collector lead at the soldering point to the pcb.

Values

16

25

25

2

30

4

280

150

- 65 ... + 150

- 65 ... + 150

≤ 275

Unit

V

mA

mW

°C

K/W

Semiconductor Group

1

Dec-11-1996

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