DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MC33264D-4.75R2 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MC33264D-4.75R2 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MC33264
MAXIMUM RATINGS (TC = 25°C, unless otherwise noted.)
Rating
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input Voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Power Dissipation and Thermal Characteristics
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Maximum Power Dissipation
Symbol
Value
Unit
VCC
13
Vdc
PD
Internally Limited W
Case 751 (SO8) D Suffix
Thermal Resistance, JunctiontoAmbient
RθJA
180
°C/W
Thermal Resistance, JunctiontoCase
RθJC
45
°C/W
Case 846A (Micro8) DM Suffix
Thermal Resistance, JunctiontoAmbient
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Output Current
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Maximum Adjustable Output Voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Operating Junction Temperature
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Operating Ambient Temperature
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Storage Temperature Range
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ NOTE: ESD data available upon request.
RθJA
IO
VO
TJ
TA
Tstg
240
100
1.15 x Vnom
125
40 to +85
65 to +150
°C/W
mA
Vdc
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Vin = 6.0 V, IO = 10 mA, CO = 1.0 μF, TJ = 25°C (Note 1), unless otherwise noted.)
Characteristic
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Output Voltage (IO = 0 mA)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 2.8 Suffix (VCC = 3.8 V)
Symbol
Min
Typ
Max
Unit
VO
V
2.74
2.8
2.86
3.0 Suffix (VCC = 4.0 V)
2.96
3.0
3.04
3.3 Suffix (VCC = 4.3 V)
3.23
3.3
3.37
3.8 Suffix (VCC = 4.8 V)
3.72
3.8
3.88
4.0 Suffix (VCC = 5.0 V)
3.92
4.0
4.08
4.75 Suffix (VCC = 5.75 V)
4.66
4.75
4.85
5.0 Suffix (VCC = 6.0 V)
4.9
5.0
5.1
Vin = (VO + 1.0) V to 12 V, IO < 60 mA,TA= 40° to +85°C
2.8 Suffix
2.7
2.9
3.0 Suffix
2.9
3.1
3.3 Suffix
3.18
3.42
3.8 Suffix
3.67
3.93
4.0 Suffix
3.86
4.14
4.75 Suffix
4.58
4.92
5.0 Suffix
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Line Regulation (Vin = [VO + 1.0] V to 12 V, IO = 60 mA)
All Suffixes
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Load Regulation (Vin = [VO + 1.0], IO = 0 mA to 60 mA)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ All Suffixes
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Dropout Voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ IO = 10 mA
4.83
5.17
Regline
2.0
10
mV
Regload
16
25
mV
VI VO
mV
47
90
IO = 50 mA
IO = 60 mA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Quiescent Current
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ON Mode (Vin = [VO + 1.0] V, IO = 0 mA)
131
200
147
230
IQ
μA
95
150
OFF Mode
ON Mode (Vin = [VO + 0.5] V, IO = 0 mA) [Note2]
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Ripple Rejection (Vin peaktopeak = [VO + 1.5] to [VO + 5.5]
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ V at f = 1.0 kHz)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Output Voltage Temperature Coefficient
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Current Limit (Vin = [VO + 1.0], VO Shorted)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Output Noise Voltage (10 Hz to 100 kHz) (Note 3)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ CL = 1.0 μF
TC
ILimit
Vn
0.3
2.0
540
900
55
65
dB
±120
100
150
110
ppm/°C
mA
μVrms
NOTES: 1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
2. Quiescent current is measured where the PNP pass transistor is in saturation. VCE = 0.5 V guarantees this condition.
3. Noise tests on the MC33264 are made with a 0.01 μF capacitor connected across Pins 8 and 5.
http://onsemi.com
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]