HMC562 Просмотр технического описания (PDF) - Micross Components

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производитель

HMC562

GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER

Micross Components 

v04.1108

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

Gate Bias Voltage (Vgg)

RF Input Power (RFIN)(Vdd = +10 Vdc)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 26 mW/°C above 85 °C)

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

+10 Vdc

-2.0 to 0 Vdc

+23 dBm

175 °C

2.3 W

39 °C/W

-65 to +150 °C

-55 to +85 °C

Class 1A

HMC562

GaAs PHEMT MMIC WIDEBAND

DRIVER AMPLIFIER, 2 - 35 GHz

Typical Supply Current vs. Vdd

Vdd (V)

+7.5

Idd (mA)

2

79

+8

80

+8.5

81

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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