HMC562 Просмотр технического описания (PDF) - Micross Components
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HMC562 Datasheet PDF : 11 Pages
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v04.1108
2
P1dB vs. Temperature
24
22
20
18
16
14
+25C
+85C
12
-55C
10
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
35
30
25
20
15
0
+25C
+85C
-55C
5
10
15
20
25
30
35
FREQUENCY (GHz)
Power Compression @ 10 GHz
24
Pout
20
Gain
PAE
16
12
8
4
0
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
INPUT POWER (dBm)
HMC562
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Psat vs. Temperature
24
22
20
18
16
14
+25C
+85C
12
-55C
10
0
5
10
15
20
25
30
35
FREQUENCY (GHz)
Gain, Power & Output IP3 vs.
Supply Voltage @ 10 GHz, Fixed Vgg
30
25
Gain
Psat
P1dB
IP3
20
15
10
7.5
8
8.5
Vdd Supply Voltage (V)
Power Compression @ 30 GHz
20
16
Pout
Gain
PAE
12
8
4
0
-10 -8 -6 -4 -2 0 2 4 6
INPUT POWER (dBm)
8 10 12
2 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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