HMC562 Просмотр технического описания (PDF) - Micross Components
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HMC562 Datasheet PDF : 11 Pages
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v04.1108
Typical Applications
2
The HMC562 wideband driver is ideal for:
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC562
GaAs PHEMT MMIC WIDEBAND
DRIVER AMPLIFIER, 2 - 35 GHz
Features
P1dB Output Power: +18 dBm
Gain: 12.5 dB
Output IP3: +27 dBm
Supply Voltage: +8V @ 80 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.42 x 0.1 mm
General Description
The HMC562 is a GaAs MMIC PHEMT Distributed
Driver Amplifier die which operates between 2 and
35 GHz. The amplifier provides 12.5 dB of gain,
+19 dBm output IP3 and +12 dBm of output power
at 1 dB gain compression while requiring 80 mA
from a +8V supply. The HMC562 is ideal for EW,
ECM and radar driver amplifier applications. The
HMC562 amplifier I/O’s are DC blocked and internally
matched to 50 Ohms facilitating integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
connected via two 0.075mm (3 mil) ribbon bonds of
minimal length 0.31mm (12 mils).
2 - 34
Electrical Specifications, TA = +25° C, Vdd= +8V, Idd= 80 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg = -0.8V Typ.)
Min. Typ. Max.
2.0 - 15.0
9.5
12.5
±0.4
0.01 0.02
14
16
15
18
21.5
27
3
80
100
Min.
Typ. Max.
15.0 - 27.0
8.5
12
±0.35
0.01 0.02
13
15
14
17
20
24
3.5
80
100
Min.
Typ. Max.
27.0 - 35.0
7
10
±1.3
0.02 0.03
10
12
10
14
16
22
5
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
80
100
mA
* Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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