HMC-ABH264 Просмотр технического описания (PDF) - Analog Devices

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HMC-ABH264

GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER

Analog Devices 

v01.0209

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

Gate Bias Voltage (Vgg)

RF Input Power (RFIN)(Vdd = +5Vdc)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 10.8 mW/°C above 85 °C)

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

5.5 V

-1 to 0.3 Vdc

+10 dBm

180 °C

1W

93 °C/W

-65 to +150 °C

-55 to +85 °C

Outline Drawing

HMC-ABH264

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 34 - 42 GHz

Typical Supply Current vs. Vdd

Vdd (V)

Idd (mA)

4.0

114

4.5

117

5.0

120

Note: Amplifier will operate over full voltage ranges shown above.

Vgg adjusted to achieve Idd= 120mA at +5V.

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ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Die Packaging Information [1]

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

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