HMC-ALH382 Просмотр технического описания (PDF) - Analog Devices
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HMC-ALH382 Datasheet PDF : 6 Pages
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v03.1210
Outline Drawing
HMC-ALH382
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
1
Die Packaging Information [1]
Standard
Alternate
GP-5 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Pad Descriptions
Pad Number
Function
1
RFIN
2
RFOUT
3
Vdd
Description
This pad is AC coupled
and matched to 50 Ohms.
This pad is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. See assembly for
required external components.
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
4
Vgg
ing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
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