HMC-ALH382 Просмотр технического описания (PDF) - Analog Devices

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HMC-ALH382

GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz

Analog Devices 

v03.1210

1

Wideband Linear Gain

HMC-ALH382

GaAs HEMT LOW NOISE

AMPLIFIER, 57 - 65 GHz

Wideband Input Return Loss

Wideband Output Return Loss

Absolute Maximum Ratings

Drain Bias Voltage

Gate Bias Voltage

Channel Temperature

Thermal Resistance

(channel to die bottom)

Continuous Pdiss (T= 85 °C)

(derate 9.2 mW/°C above 85 °C)

RF Input Power

Storage Temperature

Operating Temperature

+5.5 Vdc

-1 to +0.3 Vdc

180 °C

108.4 °C/W

0.87W

-5 dBm

-65 to +150 °C

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

1-3

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