PMT29EN Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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PMT29EN Datasheet PDF : 8 Pages
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PMT29EN
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
100
ID = 6 A
1.7
10
VGS = 10 V
1.4
1
VGS = 4.5 V
1.1
0.1
0.8
0.01
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TJ = 150 °C
TJ = 25 °C
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.25
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.20
0.2
0.15
0.10
0.05
TJ = 150 °C
0.00
0
TJ = 25 °C
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
40
ID = 1 mA
38
36
34
32
30
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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