MW7IC2040N Просмотр технического описания (PDF) - NXP Semiconductors.

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MW7IC2040N

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 2 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

μAdc

IDSS

—

—

1

μAdc

IGSS

—

—

1

μAdc

Stage 2 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 140 μAdc)

VGS(th)

1.2

2

2.7

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ2 = 330 mAdc)

VGS(Q)

—

2.8

—

Vdc

Fixture Gate Quiescent Voltage

VGG(Q)

7

8

9

Vdc

(VDD = 28 Vdc, IDQ2 = 330 mAdc, Measured in Functional Test)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

0.2

0.39

1.2

Vdc

Stage 2 — Dynamic Characteristics (1)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

246

—

pF

Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 W Avg.,

f = 1932.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on

CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

Gps

29.5

32

34.5

dB

Power Added Efficiency

PAE

16

17.5

—

%

Adjacent Channel Power Ratio

ACPR

—

- 50

- 46

dBc

Input Return Loss

IRL

—

- 15

-8

dB

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA, 1930 - 1990 MHz

Pout @ 1 dB Compression Point, CW

P1dB

—

30

—

W

IMD Symmetry @ 22 W PEP, Pout where IMD Third Order

IMDsym

MHz

Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation

—

60

—

between Upper and Lower Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

Quiescent Current Accuracy over Temperature (2)

with 5.6 kΩ Gate Feed Resistors ( - 30 to 85°C)

VBWres

—

65

—

MHz

ΔIQT

—

±3

—

%

Gain Flatness in 60 MHz Bandwidth @ Pout = 4 W Avg.

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 30 W CW

Average Group Delay @ Pout = 30 W CW, f = 1960 MHz

Part - to - Part Insertion Phase Variation @ Pout = 30 W CW,

f = 1960 MHz, Six Sigma Window

GF

—

1.2

—

dB

Φ

—

0.5

—

°

Delay

—

2.5

—

ns

ΔΦ

—

33

—

°

Gain Variation over Temperature

( - 30°C to +85°C)

ΔG

—

0.029

—

dB/°C

Output Power Variation over Temperature

( - 30°C to +85°C)

ΔP1dB

—

0.003

—

dBm/°C

1. Part internally matched both on input and output.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or

AN1987.

3. Measurement made with device in straight lead configuration before any lead forming operation is applied.

(continued)

MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

RF Device Data

Freescale Semiconductor

3

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