MW7IC2040N Просмотр технического описания (PDF) - NXP Semiconductors.

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MW7IC2040N

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

Table 1. Maximum Ratings

Rating

Drain - Source Voltage

Gate - Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Input Power

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VGS

VDD

Tstg

TC

TJ

Pin

Symbol

RθJC

Value

- 0.5, +65

- 0.5, +10

32, +0

- 65 to +150

150

225

25

Value (2,3)

Unit

Vdc

Vdc

Vdc

°C

°C

°C

dBm

Unit

°C/W

W - CDMA

(Pout = 4 W Avg., Case Temperature = 73°C) Stage 1, 28 Vdc, IDQ1 = 130 mA

4.0

Stage 2, 28 Vdc, IDQ2 = 330 mA

1.5

GSM EDGE

(Pout = 16 W Avg., Case Temperature = 76°C) Stage 1, 28 Vdc, IDQ1 = 130 mA

4.1

Stage 2, 28 Vdc, IDQ2 = 330 mA

1.4

GSM

(Pout = 40 W Avg., Case Temperature = 79°C) Stage 1, 28 Vdc, IDQ1 = 130 mA

3.9

Stage 2, 28 Vdc, IDQ2 = 330 mA

1.3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1B (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22 - A113, IPC/JEDEC J - STD - 020

3

260

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

μAdc

IDSS

—

—

1

μAdc

IGSS

—

—

1

μAdc

Stage 1 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 25 μAdc)

VGS(th)

1.2

2

2.7

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ1 = 130 mAdc)

VGS(Q)

—

2.7

—

Vdc

Fixture Gate Quiescent Voltage

(VDD = 28 Vdc, IDQ1 = 130 mAdc, Measured in Functional Test)

VGG(Q)

13

14.5

16

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

(continued)

MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

2

RF Device Data

Freescale Semiconductor

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