MW7IC2040N Просмотр технического описания (PDF) - NXP Semiconductors.

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MW7IC2040N

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS

53

52

P3dB = 47.74 dBm (59 W)

Ideal

51

50 P1dB = 47.06 dBm (51 W)

49

48

47

Actual

46

45

44

VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA

Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 1930 MHz

43

11 12 13 14 15 16 17 18 19 20 21

Pin, INPUT POWER (dBm)

NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V

Test Impedances per Compression Level

Zsource

Ω

Zload

Ω

P1dB

49.30 + j8.40

3.60 - j4.50

Figure 16. Pulsed CW Output Power

versus Input Power @ 28 V @ 1930 MHz

53

52

P3dB = 47.88 dBm (61 W)

Ideal

51

50

P1dB = 47.37 dBm (55 W)

49

48

47

Actual

46

45

44

VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 330 mA

Pulsed CW, 10 μsec(on), 10% Duty Cycle, f = 1990 MHz

43

13 14 15 16 17 18 19 20 21 22 23

Pin, INPUT POWER (dBm)

NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V

Test Impedances per Compression Level

Zsource

Ω

Zload

Ω

P1dB

50.0 - j4.90

3.40 - j5.10

Figure 17. Pulsed CW Output Power

versus Input Power @ 28 V @ 1990 MHz

RF Device Data

Freescale Semiconductor

MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

11

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