MRF8P8300HR6 Просмотр технического описания (PDF) - NXP Semiconductors.
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MRF8P8300HR6 Datasheet PDF : 14 Pages
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 750 to 820 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
2000 mA, Pout = 96 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
D
Output PAR ACPR
(%)
(dB)
(dBc)
790 MHz
20.9
35.2
6.2
--38.1
805 MHz
21.0
35.5
6.2
--38.1
820 MHz
20.9
35.7
6.1
--38.2
Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ≃ 340 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: MRF8P8300H
Rev. 1, 4/2013
MRF8P8300HR6
MRF8P8300HSR6
750--820 MHz, 96 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
NI--1230--4H
MRF8P8300HR6
NI--1230--4S
MRF8P8300HSR6
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
RFinA/VGSA 3
1 RFoutA/VDSA
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
--0.5, +70 Vdc
--6.0, +10 Vdc
32, +0
Vdc
--65 to +150 C
150
C
225
C
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 96 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz
Case Temperature 85C, 300 W CW, 28 Vdc, IDQ = 2000 mA, 820 MHz
RJC
C/W
0.26
0.21
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2011, 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P8300HR6 MRF8P8300HSR6
1
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