ATC100B6R8BT500XT Просмотр технического описания (PDF) - Freescale Semiconductor

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Компоненты Описание

производитель

ATC100B6R8BT500XT

RF Power Field Effect Transistors

Freescale Semiconductor 

f = 2220 MHz

Zload

f = 2060 MHz

Zo = 10 Ω

Zsource

f = 2220 MHz

f = 2060 MHz

VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg.

f

MHz

Zsource

W

Zload

W

2060

4.57 - j10.70

1.02 - j3.54

2080

4.57 - j10.38

0.99 - j3.34

2100

4.57 - j10.06

0.96 - j3.14

2120

4.52 - j9.72

0.93 - j2.94

2140

4.40 - j9.42

0.92 - j2.76

2160

4.15 - j9.12

0.91 - j2.59

2180

4.44 - j8.82

0.89 - j2.42

2200

4.19 - j8.53

0.88 - j2.25

2220

4.12 - j8.23

0.88 - j2.09

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 16. Series Equivalent Source and Load Impedance

RF Device Data

Freescale Semiconductor

MRF7S21170HR3 MRF7S21170HSR3

9

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