ATC100B6R8BT500XT Просмотр технического описания (PDF) - Freescale Semiconductor

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ATC100B6R8BT500XT

RF Power Field Effect Transistors

Freescale Semiconductor 

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS

61

60

Ideal

P6dB = 53.89 dBm (244 W)

59

58

P3dB = 53.56 dBm (226 W)

57

56 P1dB = 52.75 dBm

55 (188 W)

54

53

Actual

52

VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW

12 μsec(on), 10% Duty Cycle, f = 2140 MHz

51

32 33 34 35 36 37 38 39 40 41 42 43 44

Pin, INPUT POWER (dBm)

NOTE: Measured in a Peak Tuned Load Pull Fixture

Test Impedances per Compression Level

Zsource

Ω

Zload

Ω

P3dB

4.43 - j11.85

0.81 - j2.87

Figure 17. Pulsed CW Output Power

versus Input Power @ 28 V

62

Ideal

61

P6dB = 54.88 dBm (307 W)

60

59

58

P3dB = 54.65 dBm (290 W)

57

56 P1dB = 53.54 dBm

55 (226 W)

54

Actual

53

VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW

12 μsec(on), 10% Duty Cycle, f = 2140 MHz

52

33 34 35 36 37 38 39 40 41 42 43 44 45

Pin, INPUT POWER (dBm)

NOTE: Measured in a Peak Tuned Load Pull Fixture

Test Impedances per Compression Level

Zsource

Ω

Zload

Ω

P3dB

4.43 - j11.85

0.72 - j2.87

Figure 18. Pulsed CW Output Power

versus Input Power @ 32 V

MRF7S21170HR3 MRF7S21170HSR3

10

RF Device Data

Freescale Semiconductor

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