ATC100B0R1BT500XT Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

ATC100B0R1BT500XT

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

TYPICAL CHARACTERISTICS

109

108

1st Stage

107

2nd Stage

106

105

90

110 130 150 170

190 210

230 250

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 26 Vdc, Pout = 15 W PEP, and PAE = 28%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 18. MTTF versus Junction Temperature

GSM TEST SIGNAL

−10

Reference Power

−20

−30

VBW = 30 kHz

Sweep Time = 70 ms

RBW = 30 kHz

−40

−50

−60

−70

400 kHz

400 kHz

−80

600 kHz

−90

−100

600 kHz

−110

Center 1.96 GHz

200 kHz

Span 2 MHz

Figure 19. EDGE Spectrum

RF Device Data

Freescale Semiconductor

MW6IC2015NBR1 MW6IC2015GNBR1

9

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