ATC100B0R1BT500XT Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

ATC100B0R1BT500XT

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

TYPICAL CHARACTERISTICS — 1930 - 1990 MHz

28

−10

32

S21

27

30

−15

TC = −30_C

26

−20

25

VDD = 26 Vdc

Pout = 35 dBm CW

−25

IDQ1 = 100 mA

IDQ2 = 170 mA

S11

24

−30

1850

1900

1950

2000

2050

2100

28

25_C

26

85_C

24 VDD = 26 Vdc, Pout = 7.5 W (Avg.)

IDQ1 = 100 mA, IDQ2 = 170 mA

Two−Tone Measurements, Center Frequency = 1960 MHz

22

1880 1900 1920 1940 1960 1980 2000 2020

f, FREQUENCY (MHz)

Figure 14. Broadband Frequency Response

f, FREQUENCY (MHz)

Figure 15. Power Gain versus Frequency

10

VDD = 26 Vdc

IDQ1 = 100 mA

8 IDQ2 = 170 mA

f = 1960 MHz

EDGE Modulation

6

4

PAE

TC = −30_C

85_C

25_C 50

40

30

EVM

20

2

10

0

0

1

10

30

Pout, OUTPUT POWER (WATTS) AVG.

Figure 16. EVM and Power Added Efficiency

versus Output Power

−50

VDD = 26 Vdc, IDQ1 = 100 mA

−55 IDQ2 = 170 mA, f = 1960 MHz

EDGE Modulation

−60

SR @ 400 kHz

−65

25_C

TC = −30_C

85_C

−70

−75

−80 SR @ 600 kHz

−30_C

25_C

85_C

−85

0.1

1

10

30

Pout, OUTPUT POWER (WATTS) AVG.

Figure 17. Spectral Regrowth at 400 and 600 kHz

versus Output Power

MW6IC2015NBR1 MW6IC2015GNBR1

8

RF Device Data

Freescale Semiconductor

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