ATC100B0R1BT500XT Просмотр технического описания (PDF) - NXP Semiconductors.

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ATC100B0R1BT500XT

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, 1805 - 1880 MHz and

1930 - 1990 MHz

Saturated Pulsed Output Power, CW

(8 μsec(on), 1 msec(off))

Psat

—

35

—

W

Quiescent Current Accuracy over Temperature

with 1.8 kΩ Gate Feed Resistors ( - 10 to 85°C) (1)

ΔIQT

—

±3

—

%

Gain Flatness in 30 MHz Bandwidth @ Pout = 3 W CW

GF

—

0.3

—

dB

Average Deviation from Linear Phase in 30 MHz Bandwidth

@ Pout = 3 W CW

Φ

—

±1

—

°

Average Group Delay @ Pout = 3 W CW Including Output Matching

Delay

—

2.7

—

ns

Part - to - Part Insertion Phase Variation @ Pout = 3 W CW,

Six Sigma Window

ΔΦ

—

±15

—

°

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 130 mA, IDQ2 = 170 mA,

Pout = 3 W Avg., 1805 - 1990 MHz and 1930 - 1990 MHz EDGE Modulation

Power Gain

Gps

—

27

—

dB

Power Added Efficiency

PAE

—

19

—

%

Error Vector Magnitude

EVM

—

0.8

—

%

Spectral Regrowth at 400 kHz Offset

Spectral Regrowth at 600 kHz Offset

SR1

—

- 69

—

dBc

SR2

—

- 78

—

dBc

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or

AN1987.

RF Device Data

Freescale Semiconductor

MW6IC2015NBR1 MW6IC2015GNBR1

3

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