DTC124EL-AL3-B Просмотр технического описания (PDF) - Unisonic Technologies
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DTC124EL-AL3-B Datasheet PDF : 3 Pages
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DTC124E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
Input Voltage
VCC
50
V
VIN
-10 ~ +40
V
Output Current
IC
IO
100
30
mA
SOT-23/SOT-323
200
Power Dissipation
SOT-523
PD
150
mW
TO-92
625
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
Input Voltage
VI(OFF)
VI(ON)
Output Voltage
Input Current
VO(ON)
II
Output Current
DC Current Gain
IO(OFF)
hFE
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
Note: Transition frequency of the device
TEST CONDITIONS
VCC= 5V, IOUT=100μA
VOUT= 0.2V, IOUT= 5mA
IOUT/IIN= 10mA / 0.5 mA
VIN= 5V
VCC= 50V , VIN=0V
VOUT= 5V, IOUT= 5mA
VCE=10V, IE = -5mA, f=100MHz (Note )
MIN TYP MAX UNIT
3
0.5
V
0.1 0.3 V
0.36 mA
0.5 μA
56
15.4 22 28.6 kΩ
0.8 1 1.2
250
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-045.F
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