DTC124EL-AE3-R(2005) Просмотр технического описания (PDF) - Unisonic Technologies
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DTC124EL-AE3-R Datasheet PDF : 3 Pages
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DTC124E
■ TYPICAL CHARACTERICS
NPN EPITAXIAL SILICON TRANSISTOR
100
50
20
10
5
2
1
500m
Fig.1 Input voltage vs.output current
(ON characterristics)
Vo=-0.2V
Ta= -40℃
-25 ℃
100 ℃
200m
100m
100μ
2 0 0 μ 5 0 0 μ 1m 2m
5m
10m 20m
Output Current :Io(A)
50m 100m
Fig.3 DC current gain vs.output current
1k
500
T a=100℃
200
25℃
-40℃
100
Vo=5V
50
20
10
5
2
1
100μ 2 0 0 μ 5 0 0 μ 1m 2m
5m 10m 20m 50m 100m
Output Current :Io(A)
10m
5m
Fig.2 Output current vs Input voltage
.(OFF characterristics)
V c c =5V
2m
1m
500μ
200μ
100μ
50μ
T a=100℃
25℃
-40℃
20μ
10μ
5μ
2μ
1μ
0
0.5 1.0
1.5
2.0 2.5 3.0
Input Voltage :V I(OFF) V
Fig.4Output voltage vs.output current
1
500m
l o/lI =20
200m
100m
50m
T a=100℃
25℃
-40℃
20m
10m
5m
2m
1m
100μ 2 0 0 μ 5 0 0 μ 1m 2m
5m
10m 20m
Output Current :Io(A)
50m 100m
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exceed, even m om entarily, rated values (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
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and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-045,B
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